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Proceedings Paper

MSB for ILT masks
Author(s): Juergen Gramss; Ulf Weidenmueller; Arnd Stoeckel; Renate Jaritz; Hans-Joachim Doering; Monika Boettcher
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Paper Abstract

Multi Shaped Beam (MSB) throughput simulation results have already been published in the past. An IC mask set of a 32nm node logic device was one of the applications that had been analyzed in more detail. In this paper we want to highlight results of shot count and write time evaluations done for Inverse Lithography Technology (ILT) masks targeting the 22nm technology node. The test pattern data we used for these practice-oriented analyses was designed by DNP / Japan and created by Luminescent Technologies, Inc. / USA. To achieve reliable evaluation results, the influence of different MSB configurations on shot count and mask write time has been taken into account and will be discussed here. Exposure results of pattern details are presented and compared with the fracturing result. The MSB engineering tool we used for our investigations covers such major components like an electron-optical column, a precision x/y stage and the MSB data path.

Paper Details

Date Published: 1 April 2011
PDF: 6 pages
Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798504 (1 April 2011); doi: 10.1117/12.896883
Show Author Affiliations
Juergen Gramss, Vistec Electron Beam GmbH (Germany)
Ulf Weidenmueller, Vistec Electron Beam GmbH (Germany)
Arnd Stoeckel, Vistec Electron Beam GmbH (Germany)
Renate Jaritz, Vistec Electron Beam GmbH (Germany)
Hans-Joachim Doering, Vistec Electron Beam GmbH (Germany)
Monika Boettcher, Vistec Electron Beam GmbH (Germany)


Published in SPIE Proceedings Vol. 7985:
27th European Mask and Lithography Conference
Uwe F.W. Behringer, Editor(s)

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