Share Email Print
cover

Proceedings Paper

Simulation based mask defect printability verification and disposition. Part II
Author(s): Eric Guo; Irene Shi; Blade Gao; Nancy Fan; Guojie Cheng; Li Ling; Ke Zhou; Gary Zhang; Ye Chen; Chingyun Hsiang; Bo Su
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have reported the first part of the work in 2009 BACUS meeting [1], using primarily SEM mask defect images as input. This paper is the extension of that work using mask optical inspection images with a new image process algorithm. Simulation has been widely used in overall lithography process, called computational lithography, as an effective way for cost and time reduction. As the industry moves towards 45nm and 32nm technology nodes in production, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defects are real defects, and among the real defects, which defects should be repaired and how to verify the post-repair defects. In this paper, we report simulation mask defect printability check and disposition results extending beyond SEM mask defect images [1] into optical inspection mask defects images to demonstrate cost and time reduction by simulation in mask defect management area. A new algorithm has been developed in the software tool to convert optical inspection mask defect images into "pseudo-defect" polygons in GDS format. Then, the converted defect polygons were filled with the correct tone to form mask patterns and were merged back into the original design GDS. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple optical model can be used to get aerial image intensity of AOI. With build-in contour analysis functions, the software can easily compare the contour (or intensity) differences between real mask (with defect) and normal mask (without defect). With user provided judging criteria, software can be easily disposition the defect based on contour comparison. The software has been tested and adapted for production use. We will present some accuracy test results against AIMS tool or wafer CDs in defect printability check.

Paper Details

Date Published: 13 October 2011
PDF: 8 pages
Proc. SPIE 8166, Photomask Technology 2011, 81662D (13 October 2011); doi: 10.1117/12.896879
Show Author Affiliations
Eric Guo, Semiconductor Manufacturing International Corp. (China)
Irene Shi, Semiconductor Manufacturing International Corp. (China)
Blade Gao, Semiconductor Manufacturing International Corp. (China)
Nancy Fan, Semiconductor Manufacturing International Corp. (China)
Guojie Cheng, Anchor Semiconductor (China)
Li Ling, Anchor Semiconductor (China)
Ke Zhou, Anchor Semiconductor (China)
Gary Zhang, Anchor Semiconductor (China)
Ye Chen, Anchor Semiconductor (United States)
Chingyun Hsiang, Anchor Semiconductor (United States)
Bo Su, Anchor Semiconductor (United States)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

© SPIE. Terms of Use
Back to Top