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Proceedings Paper

Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects
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Paper Abstract

Extreme ultraviolet (EUV) - lithography at a wavelength around 13.5 nm is considered as the most promising successor of optical projection lithography. This paper reviews simulation models for EUV lithography. Resist model parameters are calibrated with experimental data. The models are applied for the investigation of the impact of mask multilayer defects on the lithographic process.

Paper Details

Date Published: 5 October 2011
PDF: 16 pages
Proc. SPIE 8171, Physical Optics, 81710M (5 October 2011); doi: 10.1117/12.896813
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany)
Peter Evanschitzky, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Feng Shao, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany)
Tim Fühner, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Gian F. Lorusso, IMEC (Belgium)
Eric Hendrickx, IMEC (Belgium)
Mieke Goethals, IMEC (Belgium)
Rik Jonckheere, IMEC (Belgium)
Tristan Bret, Carl Zeiss SMS GmbH (Germany)
Thorsten Hofmann, Carl Zeiss SMS GmbH (Germany)


Published in SPIE Proceedings Vol. 8171:
Physical Optics
Daniel G. Smith; Frank Wyrowski; Andreas Erdmann, Editor(s)

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