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Proceedings Paper

Growth of ZnO-based nanorod heterostructures and their photonic device applications
Author(s): Jinkyoung Yoo; S. Thomas Picraux; Gyu-Chul Yi
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Paper Abstract

This proceeding summarizes the materials preparation of position-controlled ZnO-based nanorod heterostructures and fabrication of vertically-aligned wide band gap semiconductor nanorod light-emitting devices. Especially the fabrication of GaN/InxGa1-xN/GaN/ZnO nanorod heterostructured visible-light-emitter arrays on sapphire and Si substrates, representing important progress in the field of nanoheteroepitaxy and photonic devices in nanoscale, are reported. Particularly, position-controlled vertical nanostructure arrays make those possible to prepare high-quality material systems without stress or strain accumulation and to fabricate high-performance light-emitting devices (LEDs) with a three-dimensional device configuration. Our method based on nanoheteroepitaxy and position-controlled nanodevice integration for fabricating GaN-based micro-LED arrays constitutes a promising strategy for resolving the issues of conventional GaN LEDs and fabricating high-performance LEDs on various substrates for potential optoelectronic integrated circuits and solid-state lighting applications.

Paper Details

Date Published: 16 September 2011
PDF: 7 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060N (16 September 2011); doi: 10.1117/12.896690
Show Author Affiliations
Jinkyoung Yoo, Los Alamos National Lab. (United States)
S. Thomas Picraux, Los Alamos National Lab. (United States)
Gyu-Chul Yi, Seoul National Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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