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Proceedings Paper

THz/sub-THz detector based on electrons and holes heating by electromagnetic wave propagating along Hg1-xCdxTe layer
Author(s): F. Sizov; V. Zabudsky; V. Dobrovolsky; N. Momot; Z. Tsybrii; M. Apats'ka; M. Smoliy; N. Dmytruk; S. Bunchuk; N. Mikhailov; V. Varavin
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Paper Abstract

Direct detection thin-film bipolar narrow-gap Hg1-xCdxTe semiconductor is considered as a waveguide THz/sub-THz bolometer. The response of such thin layer detectors was calculated and measured in ν=0.037-1.54 THz frequency range at T~70-300 K. Noise equivalent power of such detectors can reach NEP300K~4×10-10 W/Hz1/2 and NEP100K~10-11 in sub-THz frequency range.

Paper Details

Date Published: 22 September 2011
PDF: 7 pages
Proc. SPIE 8167, Optical Design and Engineering IV, 816728 (22 September 2011); doi: 10.1117/12.896580
Show Author Affiliations
F. Sizov, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
V. Zabudsky, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
V. Dobrovolsky, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
N. Momot, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Z. Tsybrii, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
M. Apats'ka, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
M. Smoliy, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
N. Dmytruk, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
S. Bunchuk, V. Lashkaryov Institute of Semiconductor Physics (Ukraine)
N. Mikhailov, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
V. Varavin, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)


Published in SPIE Proceedings Vol. 8167:
Optical Design and Engineering IV
Jean-Luc M. Tissot; Jeffrey M. Raynor; Laurent Mazuray; Rolf Wartmann; Andrew Wood, Editor(s)

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