Share Email Print

Proceedings Paper

Integrated amplifying nanowire FET for surface and bulk sensing
Author(s): Chi On Chui; Kyeong-Sik Shin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

For over one decade, numerous research have been performed on field-effect transistor (FET) sensors with a quasi-onedimensional (1D) nanostructure channel demonstrating highly sensitive surface and bulk sensing. The high surface and bulk sensing sensitivity respectively arises from the inherently large surface area-to-volume ratio and tiny channel volume. The generic nanowire FET sensors, however, have limitations such as impractically low output current levels especially near the limit of detection (LOD) that would require downstream remote amplification with an appreciable amount of added noise. We have recently proposed and experimentally demonstrated an innovative amplifying nanowire FET sensor structure that seamlessly integrates therein a sensing nanowire and a nanowire FET amplifier. This novel sensor structure embraces the same geometrical advantage in quasi-1D nanostructure yet it offers unprecedented closeproximity signal amplification with the lowest possible added noise. In this paper, we review the device operating principle and amplification mechanism. We also present the prototype fabrication procedures, and surface and bulk sensing experimental results showing significantly enhanced output current level difference as predicted.

Paper Details

Date Published: 16 September 2011
PDF: 8 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060C (16 September 2011); doi: 10.1117/12.896476
Show Author Affiliations
Chi On Chui, Univ. of California, Los Angeles (United States)
Kyeong-Sik Shin, Univ. of California, Los Angeles (United States)

Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

© SPIE. Terms of Use
Back to Top