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Proceedings Paper

Nanowire based heterostructures: fundamental properties and applications
Author(s): Martin Heiss; Carlo Colombo; Anna Fontcuberta i Morral
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Paper Abstract

In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthesized with molecular beam epitaxy are reviewed. Special focus is given on surface passivation mechanisms with radial epitaxial passivation shells. The growth of radial p-i-n junctions in GaAs nanowires is discussed. Characterization of such nanowires on a single nanowire level is presented. The fundamental limits of single nanowire optical device performance are obtained by numerical simulation and discussed.

Paper Details

Date Published: 16 September 2011
PDF: 15 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 810603 (16 September 2011); doi: 10.1117/12.896471
Show Author Affiliations
Martin Heiss, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Carlo Colombo, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Anna Fontcuberta i Morral, Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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