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Proceedings Paper

A high performance solution processable organic semiconductor material for OTFT devices
Author(s): Christopher J. Newsome; Julian C. Carter; Richard J. Wilson; Jeremy H. Burroughes
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Paper Abstract

We demonstrate the performance of thin film transistor devices based on a solution processable organic semiconductor with a field effect mobility of up to 2.5cm2V-1s-1. The performance of the material is demonstrated in a top gate, bottom contact device architecture operational in air without the requirement for device encapsulation. From a device performance aspect, we also highlight the influence that contact resistance has on the mobility.

Paper Details

Date Published: 7 September 2011
PDF: 6 pages
Proc. SPIE 8117, Organic Field-Effect Transistors X, 811710 (7 September 2011); doi: 10.1117/12.896166
Show Author Affiliations
Christopher J. Newsome, Cambridge Display Technology Ltd. (United Kingdom)
Julian C. Carter, Cambridge Display Technology Ltd. (United Kingdom)
Richard J. Wilson, Cambridge Display Technology Ltd. (United Kingdom)
Jeremy H. Burroughes, Cambridge Display Technology Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 8117:
Organic Field-Effect Transistors X
Zhenan Bao; Iain McCulloch, Editor(s)

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