Share Email Print

Proceedings Paper

Current status of EUV mask inspection using 193nm optical inspection system in 30nm node and beyond
Author(s): Sang Hoon Han; Jihoon Na; Wonil Cho; Dong Hoon Chung; Chan-Uk Jeon; HanKu Cho; Dana Bernstein; Eun Young Park; Anoop Sreenath; Shmoolik Mangan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Extreme Ultra Violet Lithography (EUVL) is one of the most advanced patterning technologies to overcome the critical resolution limits of current ArF lithography for 30nm generation node and beyond. Since EUVL mask manufacturing process has not been fully stabilized yet, it is still suffering from many defect issues such as blank defects, defects inside multilayer causing phase defects, CD defects, LERs (Line Edge Roughness), and so on. One of the most important roles in mask manufacturing process belongs to mask inspection tools, which monitor and visualize mask features, defects and process quality for the EUVL process development. Moreover, as the portion of EUV mask production has been increased due to the EUV Pre-Production Tool (PPT) development, mask inspection technologies for EUVL become highly urgent and critical to guarantee mask quality. This paper presents a promising inspection technique for increasing the contrast of pattern imaging and defects capture rate using configurable illumination conditions in 193nm wavelength inspection tool.

Paper Details

Date Published: 1 April 2011
PDF: 10 pages
Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850V (1 April 2011); doi: 10.1117/12.895209
Show Author Affiliations
Sang Hoon Han, Samsung Electronics, Co., Ltd. (Korea, Republic of)
Jihoon Na, Samsung Electronics, Co., Ltd. (Korea, Republic of)
Wonil Cho, Samsung Electronics, Co., Ltd. (Korea, Republic of)
Dong Hoon Chung, Samsung Electronics, Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, Samsung Electronics, Co., Ltd. (Korea, Republic of)
HanKu Cho, Samsung Electronics, Co., Ltd. (Korea, Republic of)
Dana Bernstein, Applied Materials (Israel)
Eun Young Park, Applied Materials (Israel)
Anoop Sreenath, Applied Materials (Israel)
Shmoolik Mangan, Applied Materials (Israel)

Published in SPIE Proceedings Vol. 7985:
27th European Mask and Lithography Conference
Uwe F.W. Behringer, Editor(s)

© SPIE. Terms of Use
Back to Top