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Proceedings Paper

Phase-shifting effect of thin-absorber EUV masks
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Paper Abstract

Phase-shifting effect of EUV masks with various absorber thicknesses has been studied both by simulations and experiments. In EUV lithography, masks with 180 phase shifting absorber work like embedded attenuated phase-shifting masks. At 66nm thickness of TaN/TaON absorber, 180 degree phase shifting can be achieved in theory. Based on the experiments, we observed that the true180 degree phase shifting can be achieved with absorber thickness between 66 and 76 nm. In this paper, phase shifting impact of the various thickness absorbers has been characterized. Imaging performance of masks with 51 nm, 66 nm and 76 nm thick absorber has been experimentally compared. The process window of various thickness absorber masks are rigorously studied.

Paper Details

Date Published: 14 October 2011
PDF: 9 pages
Proc. SPIE 8166, Photomask Technology 2011, 816618 (14 October 2011); doi: 10.1117/12.895149
Show Author Affiliations
Hiroyoshi Tanabe, Intel K. K. (Japan)
Tetsunori Murachi, Intel K. K. (Japan)
Sang H. Lee, Intel Corp. (United States)
Manish Chandhok, Intel Corp. (United States)
Seh-Jin Park, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Taichi Ogase, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 8166:
Photomask Technology 2011
Wilhelm Maurer; Frank E. Abboud, Editor(s)

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