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Proceedings Paper

Image simulation of projection systems in photolithography
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Paper Abstract

The well-established Abbe formulation is one of today's most common approaches for the accurate image simulation of partial coherent projection systems used in semiconductor lithography. The development and application of lithographic imaging systems close to the theoretical resolution limits and the desire for the simulation of larger mask areas with high accuracy require several extensions of the classical Abbe approach. This paper presents the basics of the Abbe approach including the so-called Hopkins assumption. For the accurate simulation of today's lithography systems important physical effects like strong off-axis illumination, small feature sizes, ultra-high NAs, a polarization dependent behavior, imaging demagnification, aberrations, apodizations, and Jones pupils have to be described and taken into account. The resulting extensions of the Abbe approach are presented. The accuracy, flexibility, and computational performance of the new approach are demonstrated by application examples.

Paper Details

Date Published: 23 May 2011
PDF: 10 pages
Proc. SPIE 8083, Modeling Aspects in Optical Metrology III, 80830E (23 May 2011); doi: 10.1117/12.895029
Show Author Affiliations
P. Evanschitzky, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
T. Fühner, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
A. Erdmann, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)


Published in SPIE Proceedings Vol. 8083:
Modeling Aspects in Optical Metrology III
Bernd Bodermann, Editor(s)

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