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Proceedings Paper

MBE growth of ZnTe and HgCdSe on Si: a new IR material
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Paper Abstract

Growth of ZnTe and HgCdSe on Si has been pursued using molecular beam epitaxy (MBE) as a new class of IR materials. Besides, ZnTe/Si can also be used as a lattice-matching, large area and low cost alternate substrate for other III-V and II-VI compound semiconductors, such as GaSb based type-II superlattice materials around 6.1A. We report in this paper our systematic studies on MBE growth conditions for ZnTe(211) on Si and highlights of MBE growth of HgCdSe on ZnTe/Si. A close to optimal growth window has been established for MBE growth of ZnTe(211)/Si(211) to achieve high crystalline quality, low defect and dislocation densities as well as excellent surface morphology. Using this baseline MBE growth process, we are able to obtain ZnTe(211)/Si wafers with X-ray full-width at half-maximum (FWHM) as low as 70 arcsec, low dislocation density (~105 cm-2) and defect density (1000 cm-2).

Paper Details

Date Published: 16 September 2011
PDF: 6 pages
Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 815511 (16 September 2011); doi: 10.1117/12.894642
Show Author Affiliations
Yuanping Chen, U.S. Army Research Lab. (United States)
Gregory Brill, U.S. Army Research Lab. (United States)
David Benson, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Priyalal Wijewarnasuriya, U.S. Army Research Lab. (United States)
Nibir Dhar, U.S. Army Research Lab. (United States)
Defense Advanced Research Projects Agency (United States)


Published in SPIE Proceedings Vol. 8155:
Infrared Sensors, Devices, and Applications; and Single Photon Imaging II
Manijeh Razeghi; Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya, Editor(s)

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