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Proceedings Paper

Ge on Si and InP/InGaAs single photon avalanche diodes
Author(s): Zhiwen Lu; Wenlu Sun; Chong Hu; Archie Holmes; Joe C. Campbell; Yimin Kang; Han-Din Liu
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Paper Abstract

This paper describes single photon detection for Ge on Si separate-absorption-charge-multiplication (SACM) avalanche photodiodes and advances in quenching for InP/InGaAs single photon avalanche diodes.

Paper Details

Date Published: 16 September 2011
PDF: 10 pages
Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 81551E (16 September 2011); doi: 10.1117/12.894533
Show Author Affiliations
Zhiwen Lu, Univ. of Virginia (United States)
Wenlu Sun, Univ. of Virginia (United States)
Chong Hu, Univ. of Virginia (United States)
Archie Holmes, Univ. of Virginia (United States)
Joe C. Campbell, Univ. of Virginia (United States)
Yimin Kang, Intel Corp. (United States)
Han-Din Liu, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 8155:
Infrared Sensors, Devices, and Applications; and Single Photon Imaging II
Manijeh Razeghi; Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya, Editor(s)

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