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Proceedings Paper

Properties of Si/SiOx quantum well structure for solar cells applications
Author(s): Kwang Ho Kim; Ji-Hoon Kim; Pyungwoo Jang; Chisup Jung; Kyu Seomoon
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Paper Abstract

The SiOx/Si quantum wells (QWs) structures were fabricated by using the successive deposition technique, as quantum confinement device to increase the effective energy bandgap and passivation effect in Si surface for the third generation solar cell applications. In Si/SiOx QWs, the thicknesses of Si layers and SiOx layers were varied between 1 to 5 nm, respectively. The roughness of sputter-deposited Si on SiOx was less than 4 Å in the thickness of 2 nm. By using the SiOx/Si QW structures on Si surfaces, the lifetime measured by u-PCD technique increased as a result of passivated surface effects. The tunneling phenomena and good interface properties were observed in the fabricated QWs structures.

Paper Details

Date Published: 22 September 2011
PDF: 7 pages
Proc. SPIE 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II, 81111D (22 September 2011); doi: 10.1117/12.894447
Show Author Affiliations
Kwang Ho Kim, Cheongju Univ. (Korea, Republic of)
Ji-Hoon Kim, Cheongju Univ. (Korea, Republic of)
Pyungwoo Jang, Cheongju Univ. (Korea, Republic of)
Chisup Jung, Cheongju Univ. (Korea, Republic of)
Kyu Seomoon, Cheongju Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8111:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II
Loucas Tsakalakos, Editor(s)

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