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Proceedings Paper

Design of integrated readout circuit with enhanced capacitance mechanism for dual-band infrared detector
Author(s): Tai-Ping Sun; Yi-Chuan Lu; Hsiu-Li Shieh; Shiuan-Shuo Shiu; Yi-Ting Liu; Shiang-Feng Tang; Wen-Jen Lin
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Paper Abstract

This study proposes a solution for an excessive dark current by a sharing capacitor, which avoids output signal distortion due to integration voltage saturation. Integration capacitance can be changed by adding a switch in the pixel circuit, which will increase the capacitance by two times the original. This circuit also provides output functions of either single-band or dual-band by switching to different sensor. This integrated readout circuit design adopts the TSMC 0.35um 2P4M CMOS 5V process, run on a 5V power supply and operated at a 3MHz clock rate. The dual-band pixel circuit uses an interlace structure, the pixel circuit areas of the two wavelengths are both 30um x 30um. The mid-wave and long-wave sensor currents are from 1nA to 2nA and 6nA to 8nA, respectively, and output swing is 2.8V.

Paper Details

Date Published: 16 September 2011
PDF: 7 pages
Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 815505 (16 September 2011); doi: 10.1117/12.894337
Show Author Affiliations
Tai-Ping Sun, National Chi Nan Univ. (Taiwan)
Yi-Chuan Lu, National Chi Nan Univ. (Taiwan)
Hsiu-Li Shieh, National Chi Nan Univ. (Taiwan)
Shiuan-Shuo Shiu, National Chi Nan Univ. (Taiwan)
Yi-Ting Liu, National Chi Nan Univ. (Taiwan)
Shiang-Feng Tang, Chung-Shan Institute of Science and Technology (Taiwan)
Wen-Jen Lin, Chung-Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 8155:
Infrared Sensors, Devices, and Applications; and Single Photon Imaging II
Manijeh Razeghi; Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya, Editor(s)

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