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Proceedings Paper

Carrier leakage in Ge/Si core-shell nanocrystals for lasers: core size and strain effects
Author(s): Mahesh R. Neupane; Rajib Rahman; Roger K. Lake
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Paper Abstract

The electronic structure and optical properties of Ge-core/Si-shell nanocrystal or quantum dot (QD) are investigated using the atomistic tight binding method as implemented in NEMO3D. The thermionic lifetime that governs the hole leakage mechanism in the Ge/Si QD based laser, as a function of the Ge core size and strain, is also calculated by capturing the bound and extended eigenstates, well below the band edges. We also analyzed the eect of core size and strain on optical properties such as transition energies and transition rates between electron and hole states. Finally, a quantitative and qualitative analysis of the leakage current due to the hole leakage through the Ge-core/Si-shell QD laser, at dierent temperatures and Ge core sizes, is presented.

Paper Details

Date Published: 23 September 2011
PDF: 8 pages
Proc. SPIE 8102, Nanoengineering: Fabrication, Properties, Optics, and Devices VIII, 81020P (23 September 2011); doi: 10.1117/12.894153
Show Author Affiliations
Mahesh R. Neupane, Univ. of California, Riverside (United States)
Rajib Rahman, Sandia National Labs. (United States)
Roger K. Lake, Univ. of California, Riverside (United States)


Published in SPIE Proceedings Vol. 8102:
Nanoengineering: Fabrication, Properties, Optics, and Devices VIII
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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