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Proceedings Paper

High performance type II superlattice photo diodes for long wavelength infrared applications
Author(s): Yiqiao Chen; Aaron Moy; Kan Mi; Peter Chow
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Paper Abstract

In this paper we report improved device performance for type II superlattice (SL) photo diodes by inserting a graded AlGaSb barrier layer inserted into the depletion region of the PIN diode to suppress dark current and employing SiO2 as a passivation layer. The I-V characteristics shows presence of AlGaSb barrier layer in the device structure increased R0A values by up to a factor of 40 times. Sidewall resistivity was increased by an order of magnitude with SiO2 passivation. The fabricated photo diode with λc=12.8-μm shows peak responsivity of 3.7 A/W at 10.6 μm and Johnson noise limited peak detectivity of 1×1011 cmHz1/2/W under zero bias at 83 K under 300 K background radiation with a 2π field-of-view.

Paper Details

Date Published: 16 September 2011
PDF: 12 pages
Proc. SPIE 8154, Infrared Remote Sensing and Instrumentation XIX, 81540I (16 September 2011); doi: 10.1117/12.894036
Show Author Affiliations
Yiqiao Chen, SVT Associates, Inc. (United States)
Aaron Moy, SVT Associates, Inc. (United States)
Kan Mi, SVT Associates, Inc. (United States)
Peter Chow, SVT Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 8154:
Infrared Remote Sensing and Instrumentation XIX
Marija Strojnik; Gonzalo Paez, Editor(s)

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