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Proceedings Paper

Plasmonically enhanced emission from an inverted GaN light emitting diode
Author(s): Michael A. Mastro; Byung-jae Kim; J. A. Freitas; Joshua D. Caldwell; Ron Rendell; Jennifer Hite; Charles R. Eddy; Jihyun Kim
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Paper Abstract

Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the nearbandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.

Paper Details

Date Published: 21 September 2011
PDF: 6 pages
Proc. SPIE 8096, Plasmonics: Metallic Nanostructures and Their Optical Properties IX, 809615 (21 September 2011); doi: 10.1117/12.894010
Show Author Affiliations
Michael A. Mastro, U.S. Naval Research Lab. (United States)
Byung-jae Kim, Korea Univ. (Korea, Republic of)
J. A. Freitas, U.S. Naval Research Lab. (United States)
Joshua D. Caldwell, U.S. Naval Research Lab. (United States)
Ron Rendell, U.S. Naval Research Lab. (United States)
Jennifer Hite, U.S. Naval Research Lab. (United States)
Charles R. Eddy, U.S. Naval Research Lab. (United States)
Jihyun Kim, Korea Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8096:
Plasmonics: Metallic Nanostructures and Their Optical Properties IX
Mark I. Stockman, Editor(s)

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