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Proceedings Paper

Study of recombination mechanisms limiting the performance of Sb-based III-V type II superlattices for infrared detectors
Author(s): Blair C. Connelly; Grace D. Metcalfe; Hongen Shen; Michael Wraback
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Paper Abstract

Time-resolved photoluminescence measurements are used to study minority carrier lifetimes in type II superlattices (T2- SL) to investigate the recombination mechanisms that currently limit their performance. Time-domain measurements of the photoluminescence signal demonstrate multiple exponential decay, which provide information on background carriers, acceptor states and trap states. The temperature dependence of the TRPL signal shows that the carrier lifetime is dominated by Shockley-Read-Hall recombination. Optimal sample design for photoluminescence measurements is discussed. Photoluminescence measurements and modeling of the time-resolved signal in device structures demonstrate that the restoring current in a narrow bandgap junction dominates the carrier recombination, leading to measured lifetimes that are ostensibly long. Experimental results are presented on T2-SL samples that vary the superlattice absorber width and doping level. The effect of the interface type on carrier lifetime is investigated in multiple quantum well structures. Variations of the absorber width, doping level and interface type are not found to strongly influence the carrier lifetime.

Paper Details

Date Published: 16 September 2011
PDF: 10 pages
Proc. SPIE 8155, Infrared Sensors, Devices, and Applications; and Single Photon Imaging II, 81550L (16 September 2011); doi: 10.1117/12.893964
Show Author Affiliations
Blair C. Connelly, U.S. Army Research Lab. (United States)
Grace D. Metcalfe, U.S. Army Research Lab. (United States)
Hongen Shen, U.S. Army Research Lab. (United States)
Michael Wraback, U.S. Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 8155:
Infrared Sensors, Devices, and Applications; and Single Photon Imaging II
Manijeh Razeghi; Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya, Editor(s)

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