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Proceedings Paper

Mathematical modeling of 1D binary photonic tuner and realization of temperature sensor
Author(s): A. Lahiri; M. Chakraborty
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Paper Abstract

In recent years photonic crystals have become a favored area of research due to their diversified applications. In this paper we propose a mathematical model for analyzing the photonic band gap of a 1D binary photonic crystal (GaAs and air) which allows us to use it effectively as a photonic tuner which is an integral part of any optical amplifier. As optical parameters like reflection and refraction follows similar pattern from each plane within a photonic crystal, we can take help of characteristic matrix for a single plane and multiply (m) times where the crystal consists of (m) periods. Using the fact that the characteristic matrix comes out to be unimodular and taking help of Cayley-Hamilton theorem and Chebyshev polynomials, we expand the matrix of the entire system to derive the location and width of photonic band gaps. Higher stop bands occur at lower frequency of incoming radiation and central bandgap wavelength decreases with increasing angle of incidence. The power transmitted by the tuning crystal decreases for radiations away from normal. Using a polarizer model, the attenuation is computed to be proportional to log|Cos2θ|, where θ is the angle of incidence. The mathematical modeling developed can also be extended for realization of n-array photonic crystal. We have also considered the refractive index modulation with respect to temperature for using it as a temperature sensor.

Paper Details

Date Published: 8 September 2011
PDF: 17 pages
Proc. SPIE 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V, 81200N (8 September 2011); doi: 10.1117/12.893559
Show Author Affiliations
A. Lahiri, Institute of Engineering and Management (India)
M. Chakraborty, Institute of Engineering and Management (India)


Published in SPIE Proceedings Vol. 8120:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V
Shizhuo Yin; Ruyan Guo, Editor(s)

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