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Proceedings Paper

Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique
Author(s): Michael Griesbeck; Mikhail Glazov; Eugene Sherman; Tobias Korn; Dieter Schuh; Werner Wegscheider; Christian Schüller
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Paper Abstract

Spin dynamics in zincblende two-dimensional electron systems is usually dominated by the Dyakonov-Perel spin dephasing mechanism resulting from the underlying spin-orbit fields. An exceptional situation is realized in symmetrically grown and doped GaAs/AlGaAs quantum wells grown along the [110] direction, where the Rashba contribution is negligible and the effective Dresselhaus spin-orbit field is perpendicular to the sample plane. In such a system the spin dephasing times for in- and out-of-plane crystallographic directions are expected to be strongly different and the out-of-plane spin dephasing time is significantly enhanced as compared with conventional systems. We observe the spin relaxation anisotropy by resonant spin amplification measurements in a 30 nm wide double-sided symmetrically δ-doped single quantum well with a very high mobility of about 3•106 cm2/Vs at 1.5K. A comparison of the measured resonant spin amplification traces with the developed theory taking into account the spin dephasing anisotropy yields the dephasing times whose anisotropy and magnitudes are in-line with the theoretical expectations.

Paper Details

Date Published: 15 September 2011
PDF: 7 pages
Proc. SPIE 8100, Spintronics IV, 810015 (15 September 2011); doi: 10.1117/12.893539
Show Author Affiliations
Michael Griesbeck, Univ. Regensburg (Germany)
Mikhail Glazov, Ioffe Physico-Technical Institute (Russian Federation)
Eugene Sherman, Univ. of Basque Country (Spain)
Tobias Korn, Univ. Regensburg (Germany)
Dieter Schuh, Univ. Regensburg (Germany)
Werner Wegscheider, ETH Zurich (Switzerland)
Christian Schüller, Univ. Regensburg (Germany)

Published in SPIE Proceedings Vol. 8100:
Spintronics IV
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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