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Proceedings Paper

Reverse bias test of c-Si single-cell PV modules
Author(s): Y. Jin; K. Ikeda; T. Doi
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Paper Abstract

As new methods to test degradation of c-Si single-cell PV modules, we carried out both reverse bias constant current (RBCC) test and IV duty cycle (IVDC) test under different loading levels, that is, input power to the cell. The common failure modes of field PV modules, such as finger electrodes discoloration, inflated back sheet, and burnt back sheet in the modules, were observed. It was found that cell's series resistance (Rs) increases approximately linearly with testing time, and the rate of change of Rs increased exponentially corresponding to the loading level. In the RBCC test, it was also found that cell's shunt resistance (Rsh) decayed exponentially with time, and then it approaches to constant value. Furthermore, threshold level for occurrence of breakdown breakage of the cells was found to be about 70 to 80 watt. The methods presented here demonstrated the possibility of applying the reverse bias test for degradation of c-Si single-cell PV modules.

Paper Details

Date Published: 13 September 2011
PDF: 9 pages
Proc. SPIE 8112, Reliability of Photovoltaic Cells, Modules, Components, and Systems IV, 81120Y (13 September 2011); doi: 10.1117/12.893407
Show Author Affiliations
Y. Jin, National Institute of Advanced Industrial Science and Technology (Japan)
K. Ikeda, National Institute of Advanced Industrial Science and Technology (Japan)
T. Doi, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 8112:
Reliability of Photovoltaic Cells, Modules, Components, and Systems IV
Neelkanth G. Dhere; John H. Wohlgemuth; Kevin W. Lynn, Editor(s)

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