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Proceedings Paper

Influence of lattice relaxation on the electron-spin motion in ferromagnetic films: experiment and theory
Author(s): T. Berdot; A. Hallal; P. Dey; L. Tati Bismaths; L. Joly; A. Bourzami; H. Bulou; F. Scheurer; J. Henk; M. Alouani; W. Weber
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Paper Abstract

Fe films grown on Ag(001) as well as MgO films on Fe(001) have been studied by spin-polarized electron reflection experiments. The three central observations are: 1) Oscillations with monolayer periodicity of the electron-spin motion angles ε and Φ are observed as a function of the Fe thickness. They are attributed to the oscillatory behavior of the surface-lattice strain that is relaxed at island edges of the incompletely filled top Fe layer. 2) For strongly relaxed thick Fe films a giant spin precession angle of 180o, which is accompanied by a pronounced minimum in the reflected electron intensity, is observed for an electron energy of 7.3 eV. 3) For the interface system MgO/Fe(001) a very strong sensitivity of the spin motion angles on the MgO coverage is observed for certain energy ranges. Ab-initio band structure and spin-dependent electron reflection calculations reveal that lattice relaxations during growth of Fe on Ag(001) as well as MgO on Fe(001) are responsible for the strong changes of the electron-spin motion angles.

Paper Details

Date Published: 16 September 2011
PDF: 12 pages
Proc. SPIE 8100, Spintronics IV, 81000Z (16 September 2011); doi: 10.1117/12.893320
Show Author Affiliations
T. Berdot, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)
A. Hallal, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)
P. Dey, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)
L. Tati Bismaths, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)
L. Joly, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)
A. Bourzami, Univ. Ferhat Abbas de Sétif (Algeria)
H. Bulou, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)
F. Scheurer, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)
J. Henk, Max-Planck-Institut für Mikrostrukturphysik (Germany)
M. Alouani, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)
W. Weber, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, Univ. de Strasbourg (France)


Published in SPIE Proceedings Vol. 8100:
Spintronics IV
Henri-Jean M. Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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