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Proceedings Paper

High-quality vertical light emitting diodes fabrication by mechanical lift-off technique
Author(s): Po-Min Tu; Shih-Chieh Hsu; Chun-Yen Chang
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Paper Abstract

We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2×109 to 1×108 cm-2. Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.

Paper Details

Date Published: 23 September 2011
PDF: 12 pages
Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81230R (23 September 2011); doi: 10.1117/12.893237
Show Author Affiliations
Po-Min Tu, National Chiao Tung Univ. (Taiwan)
Shih-Chieh Hsu, Tamkang Univ. (Taiwan)
Chun-Yen Chang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8123:
Eleventh International Conference on Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang, Editor(s)

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