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Proceedings Paper

Interfacial state density and terahertz radiation on oxide-GaAs interface
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Paper Abstract

The amplitude of terahertz radiation (THz) from a series of oxide films on GaAs was measured by time resolved THz emission system. The barrier heights and the densities of the interfacial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the range of 1011 cm-2. It is found that the amplitude of THz radiation from Al2O3-, Ga2O3-, and Ga2O3(Gd2O3)-GaAs structures are increases with interfacial electric field. The reason is that the electric field is lower than the "critical electric field", the amplitude is proportional to the product of the electric field and the number of photo-excited carriers. However, as the field higher than the critical electric field, sample of air-GaAs structure, the lower THz amplitude was obtained due to the maximum drift velocity declines slightly as the field increases.

Paper Details

Date Published: 7 September 2011
PDF: 7 pages
Proc. SPIE 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V, 81201B (7 September 2011); doi: 10.1117/12.893218
Show Author Affiliations
Chung-Chih Chang, Chinese Military Academy (Taiwan)
Ming-Seng Hsu, Chinese Military Academy (Taiwan)
Wei-Juann Chen, National Cheng Kung Univ. (Taiwan)
Yau-Chyr Wang, Nan Jeon Institute of Technology (Taiwan)
Wei-Yang Chou, National Cheng Kung Univ. (Taiwan)
Jen-Wei Huang, Chinese Military Academy (Taiwan)


Published in SPIE Proceedings Vol. 8120:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V
Shizhuo Yin; Ruyan Guo, Editor(s)

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