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Proceedings Paper

Localization model for cochlear implants
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Paper Abstract

Normal hearing persons are able to localize the direction of sounds better using both ears than when listening with only one ear. Localization ability is dependent on auditory system perception of interaural differences in time, intensity, and phase. Interaural timing differences (ITDs) provide information for locating direction of low and mid frequency sounds, while interaural level differences (ILDs), which occur because of the horizontal plane shadowing effect of the head, provide information for locating direction of higher frequency sounds. The head related transfer function (HRTF) contains characteristic information important for acoustic localization. Models based on HRTFs take into account head shadow, torso, and pinna effects, and their impact on interaural frequency, level, and timing differences. Cochlear implants (CIs) have proven a successful treatment for persons with bilateral severe to profound hearing loss. A problem is that only some ITD and ILD cues are maintained with CI sound processing, and the microphone position alters the acoustic cues. The relative impact of differences in physical cues received by the auditory system with bilateral CIs versus differences in the ability of the damaged auditory nervous system to process bilateral inputs is not yet clear. The model presented in this paper was constructed as a step toward answering this question, and is intended to serve as a tool for future development of more optimal signal processing algorithms that may provide better localization ability for persons with bilateral CIs.

Paper Details

Date Published: 17 September 2011
PDF: 8 pages
Proc. SPIE 8134, Optics and Photonics for Information Processing V, 813408 (17 September 2011); doi: 10.1117/12.893109
Show Author Affiliations
Douglas A. Miller, Univ. of Denver (United States)
Mohammad A. Matin, Univ. of Denver (United States)


Published in SPIE Proceedings Vol. 8134:
Optics and Photonics for Information Processing V
Khan M. Iftekharuddin; Abdul Ahad Sami Awwal, Editor(s)

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