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Proceedings Paper

X-ray absorption fine-structure and optical studies of AlZnO nano-thin films grown on sapphire by pulsed laser deposition
Author(s): Y. R. Lan; S.-P. Liu; C. C. Wei; Y.-C. Fu; Y. R. Wu; J. M. Chen; R.-H. Horng; D.-S. Wuu; Z. C. Feng
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Paper Abstract

Al-doped ZnO can replace tin-doped indium oxide (ITO) as a good transparent conductive oxide (TCO) in LEDs and optoelectronic applications. We investigate on nanometer scale AlZnO thin film materials epitaxied on sapphire substrates in 350-650°C from pulsed laser deposition (PLD). Synchrotron radiation X-ray absorption fine-structure spectroscopy on O K-edge indicates that Al-doped ZnO can not form alloy at growth temperature 350°C without Al-O bonding feature. The Al-O transition of AZO550 is stronger than AZO650. These are correlated to Raman scattering measurements and analyses. Al-doped ZnO grown at 350°C possesses weak/broad Raman signals indicating a poor crystalline film. The E2 (high) mode is strong and narrow in AZO550. All these experimental results indicate that PLD grown AlZnO film on sapphire could get a better crystalline quality at 550°C than 350°C and 650°C.

Paper Details

Date Published: 26 September 2011
PDF: 8 pages
Proc. SPIE 8104, Nanostructured Thin Films IV, 81040X (26 September 2011); doi: 10.1117/12.893087
Show Author Affiliations
Y. R. Lan, National Taiwan Univ. (Taiwan)
S.-P. Liu, National Chung Hsing Univ. (Taiwan)
C. C. Wei, National Taiwan Univ. (Taiwan)
Y.-C. Fu, National Chung Hsing Univ. (Taiwan)
Y. R. Wu, National Taiwan Univ. (Taiwan)
J. M. Chen, National Synchrotron Radiation Research Ctr. (Taiwan)
R.-H. Horng, National Cheng Kung Univ. (Taiwan)
D.-S. Wuu, National Chung Hsing Univ. (Taiwan)
Daye Univ. (Taiwan)
Z. C. Feng, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8104:
Nanostructured Thin Films IV
Raúl J. Martín-Palma; Yi-Jun Jen; Tom G. Mackay, Editor(s)

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