Share Email Print
cover

Proceedings Paper

Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition
Author(s): J.-L. Huang; L. S. Wang; Y.-S. Lai; Y.-C. Lee; Z. R. Qiu; S. Liu; D.-S. Wuu; Z. C. Feng
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have performed a comparative structural and optical investigation of InGaN/GaN MQW LED wafers grown on (1122) facet GaN/sapphire templates by Metalorganic Chemical Vapor Deposition. The effect of the growth time of epitaxial lateral overgrowth GaN with (11 2 2) facets on the structural and optical properties were investigated via photoluminescence (PL), PL excitation, time-resolved PL, Raman and SEM measurement on two typical InGaN MQW samples. From temperature dependence PL measurement, we can find that these two samples both exhibit two distinguish peaks attributed to quantum wells with wide range wavelength. Raman E2 (high) signals revealed a partially relaxation of compressive stress in the facet GaN template. Experimental observations have revealed: (a) a Stokes shift between the emission peak energy and absorption edge and (b) a red shift behavior of emission with decay time (equivalently, a rise in decay time with decreasing emission energy). The large Stokes shift can be attributed to the quantum confined Stark effect (QCSE). The lower-energy side of the InGaN main emission peak is governed mainly by carrier generation in the GaN barriers and subsequent carrier transfer to the InGaN wells. Different amounts of Stokes shift indicate the interface imperfection from longer growth time of epitaxial lateral overgrowth GaN with (1122) facets. Temperature dependence of PL decay time τPL shows an interesting behavior of τPL with temperature.

Paper Details

Date Published: 23 September 2011
PDF: 11 pages
Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81230C (23 September 2011); doi: 10.1117/12.893080
Show Author Affiliations
J.-L. Huang, National Taiwan Univ. (Taiwan)
L. S. Wang, Huazhong Univ. of Science and Technology (China)
Y.-S. Lai, National Taiwan Univ. (Taiwan)
Y.-C. Lee, Tungnan Univ. (Taiwan)
Z. R. Qiu, Sun Yat-Sen Univ. (China)
S. Liu, Huazhong Univ. of Science and Technology (China)
D.-S. Wuu, National Chung Hsing Univ. (Taiwan)
Z. C. Feng, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8123:
Eleventh International Conference on Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang, Editor(s)

© SPIE. Terms of Use
Back to Top