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Proceedings Paper

Optical and electrical properties of GaN-based light emitting diodes grown on micro- and nano-scale patterned Si substrate
Author(s): Ching-Hsueh Chiu; Chien-Chung Lin; Dongmei Deng; Hao-Chung Kuo; Kei-May Lau
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Paper Abstract

We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on Micro and Nano-scale Patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy (TEM) images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nanoscale epitaxial lateral overgrowth (NELOG). The plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous substrates. From temperature dependent photoluminescence (PL) and low temperature time-resolved photoluminescence (TRPL) measurement, NPLEDs has better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibits smaller electroluminescence (EL) peak wavelength blue shift, lower reverse leakage current and decreases efficiency droop compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.

Paper Details

Date Published: 23 September 2011
PDF: 4 pages
Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81231F (23 September 2011); doi: 10.1117/12.893047
Show Author Affiliations
Ching-Hsueh Chiu, National Chiao Tung Univ. (Taiwan)
Chien-Chung Lin, National Chiao Tung Univ. (Taiwan)
Dongmei Deng, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Kei-May Lau, Hong Kong Univ. of Science and Technology (Hong Kong, China)


Published in SPIE Proceedings Vol. 8123:
Eleventh International Conference on Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang, Editor(s)

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