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Proceedings Paper

Efficiency droop improvement in GaN-based light emitting diodes by graded-composition electron blocking layer
Author(s): C. H. Wang; S. P. Chang; W. T. Chang; J. C. Li; H. C. Kuo; T. C. Lu; S. C. Wang
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Paper Abstract

A graded-composition electron blocking layer (GEBL) with aluminum composition increasing along [0001] direction was designed for c-plane GaN-based light-emitting diodes (LEDs). The simulation results demonstrated that such GEBL can effectively enhance the capability of hole transportation across the EBL as well as the electron confinement. Consequently, the LED with GEBL grown by metal-organic chemical vapor deposition exhibited better electrical characteristics, and much higher output power at high current density, as compared to conventional LED. Meanwhile, the efficiency droop was reduced from 34% in conventional LED to only 4% from the maximum value at low injection current to 200 A/cm2.

Paper Details

Date Published: 24 September 2011
PDF: 6 pages
Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81231D (24 September 2011); doi: 10.1117/12.892997
Show Author Affiliations
C. H. Wang, National Chiao Tung Univ. (Taiwan)
S. P. Chang, National Chiao Tung Univ. (Taiwan)
W. T. Chang, National Chiao Tung Univ. (Taiwan)
J. C. Li, National Chiao Tung Univ. (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
T. C. Lu, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8123:
Eleventh International Conference on Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang, Editor(s)

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