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Proceedings Paper

Indium phosphide nanowires integrated directly on carbon fibers
Author(s): Andrew J. Lohn; Timothy Jay Longson; Nobuhiko P. Kobayashi
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Paper Abstract

We have demonstrated the growth of a group III-V semiconductor binary alloy, indium phosphide (InP), directly on carbon fibers thereby enabling a union of semiconductor and structural materials. Carbon fibers were prepared by electrospinning solutions of polyacrilonitrile (PAN) and dimethylformamide (DMF) followed by carbonization at 750 °C in inert atmosphere. Gold nanoparticles dispersed on the fibers catalyzed nanowire growth by metal organic chemical vapor deposition. X-ray diffraction suggests that the nanowires appear to be epitaxially grown along the (110) direction. Geometrical parameters have been determined by scanning electron microscopy and transmission electron microscopy and elemental analysis has been carried out using energy dispersive spectroscopy. The nanowires grown from carbon fibers are composed of an amorphous shell and crystalline core which alternates at high spatial frequency.mountai

Paper Details

Date Published: 16 September 2011
PDF: 6 pages
Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060X (16 September 2011); doi: 10.1117/12.892493
Show Author Affiliations
Andrew J. Lohn, Univ. of California, Santa Cruz (United States)
NASA Ames Research Ctr. (United States)
Timothy Jay Longson, Univ. of California, Santa Cruz (United States)
Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)
NASA Ames Research Ctr. (United States)

Published in SPIE Proceedings Vol. 8106:
Nanoepitaxy: Materials and Devices III
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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