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Proceedings Paper

Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire
Author(s): Jun-Youn Kim; Yongjo Tak; Hyun-Gi Hong; Suhee Chae; Jae Won Lee; Hyoji Choi; Jae Kyun Kim; Bokki Min; Youngsoo Park; U-In Chung; Minho Kim; Seongsuk Lee; Namgoo Cha; Yoonhee Shin; Cheolsoo Sone; Jong-Ryeol Kim; Jong-In Shim
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Paper Abstract

Highly efficient InGaN/GaN LEDs grown on 4- and 8-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. High crystalline quality of n-GaN templates on Si were obtained by optimizing combination of stress compensation layers and dislocation reduction layers. The full-width at half-maximum (FWHM) values of GaN (0002) and (10-12) ω-rocking curves of n-GaN templates on 4-inch Si substrates were 205 and 290 arcsec and those on 8-inch Si substrate were 220 and 320 arcsec, respectively. The dislocation densities were measured about 2~3×108/cm2 by atomic force microscopy (AFM) after in-situ SiH4 and NH3 treatment. Under the unencapsulated measurement condition of vertical InGaN/GaN LED grown on 4-inch Si substrate, the overall output power of the 1.4×1.4 mm2 chips representing a median performance exceeded 504 mW with the forward voltage of 3.2 V at the driving current of 350 mA. These are the best values among the reported values of blue LEDs grown on Si substrates. The measured internal quantum efficiency was 90 % at injection current of 350 mA. The efficiency droops of vertical LED chips on Si between the maximum efficiency and the efficiency measured at 1A (56.69 A/cm2) input current was 5%.

Paper Details

Date Published: 24 September 2011
PDF: 6 pages
Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81230A (24 September 2011); doi: 10.1117/12.892441
Show Author Affiliations
Jun-Youn Kim, Samsung Advanced Institute of Technology (Korea, Republic of)
Yongjo Tak, Samsung Advanced Institute of Technology (Korea, Republic of)
Hyun-Gi Hong, Samsung Advanced Institute of Technology (Korea, Republic of)
Suhee Chae, Samsung Advanced Institute of Technology (Korea, Republic of)
Jae Won Lee, Samsung Advanced Institute of Technology (Korea, Republic of)
Hyoji Choi, Samsung Advanced Institute of Technology (Korea, Republic of)
Jae Kyun Kim, Samsung Advanced Institute of Technology (Korea, Republic of)
Bokki Min, Samsung Advanced Institute of Technology (Korea, Republic of)
Youngsoo Park, Samsung Advanced Institute of Technology (Korea, Republic of)
U-In Chung, Samsung Advanced Institute of Technology (Korea, Republic of)
Minho Kim, Samsung LED Co., Ltd. (Korea, Republic of)
Seongsuk Lee, Samsung LED Co., Ltd. (Korea, Republic of)
Namgoo Cha, Samsung LED Co., Ltd. (Korea, Republic of)
Yoonhee Shin, Samsung LED Co., Ltd. (Korea, Republic of)
Cheolsoo Sone, Samsung LED Co., Ltd. (Korea, Republic of)
Jong-Ryeol Kim, Sejong Univ. (Korea, Republic of)
Jong-In Shim, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8123:
Eleventh International Conference on Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang, Editor(s)

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