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Proceedings Paper

Nano and micro structures image based on asymmetric Bragg diffraction
Author(s): A. V. Kuyumchyan; V. Kohn; D. Kuyumchyan; A. Snigirev; I. Snigireva; M. Grigorev; E. Shulakov
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Paper Abstract

We present results of imaging properties of the lens-crystal system for hard x-ray radiation. The system is based on a beryllium parabolic refractive lens placed in front of the sample, and an asymmetric silicon single crystal placed behind the sample. The beryllium refractive lens has such advantages as small absorption and high efficiency which allow high spatial resolution. We demonstrate a phenomenon of image formation using the Bragg reflection of focused x-ray beam from asymmetric single crystal. For recording the magnified x-ray phase contrast image the asymmetric single crystal Si (220) with asymmetry factor b = 1/6 was used at the x-ray energy 15 keV. The experiment was performed at the beam line BM-5 of the European Synchrotron Radiation Facility (ESRF). The peculiarities of image transformation are investigated both experimentally and theoretically when the focus of refractive lens is moved across and along the optical axis. The computer program was elaborated for a simulation of image formation in the system based on the refractive lens and the crystal with asymmetric Bragg diffraction. The algorithm is based on the FFT procedure for making a transition from a real space to a plane wave space.n/mswo

Paper Details

Date Published: 23 September 2011
PDF: 5 pages
Proc. SPIE 8102, Nanoengineering: Fabrication, Properties, Optics, and Devices VIII, 810216 (23 September 2011); doi: 10.1117/12.892344
Show Author Affiliations
A. V. Kuyumchyan, American NanoScience and Advanced Medical Equipment, Inc. (United States)
Institute of Microelectronics Technology (Russian Federation)
V. Kohn, National Research Ctr. (Russian Federation)
D. Kuyumchyan, California State Univ., Northridge (United States)
A. Snigirev, European Synchrotron Radiation Facility (France)
I. Snigireva, European Synchrotron Radiation Facility (France)
M. Grigorev, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
E. Shulakov, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)


Published in SPIE Proceedings Vol. 8102:
Nanoengineering: Fabrication, Properties, Optics, and Devices VIII
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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