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Proceedings Paper

Design of an optical bit memory based on SRS slow light in SOI waveguide
Author(s): Majid Ferdosian; Hassan Kaatuzian; Hossein Shokri Kojori
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Paper Abstract

This paper presents a new model for an absorptive-dispersive optical bit memory using stimulated Raman scattering slow-light (SRS). The structure of our model is developed in a low loss silicon-on-insulator (SOI) waveguide based on Stimulated Raman Scattering (SRS). Waveguide has two parts, Raman cell and feedback pass. This model functions as a memory bit and can store an optical pulse by generating a pulse train in the output. Also by using a p-i-n diode structure in Raman cell, the delay time between OB output pulses can be tuned through changing the bias voltage.

Paper Details

Date Published: 26 July 2011
PDF: 6 pages
Proc. SPIE 8001, International Conference on Applications of Optics and Photonics, 80011L (26 July 2011); doi: 10.1117/12.892271
Show Author Affiliations
Majid Ferdosian, Amirkabir Univ. of Technology (Iran, Islamic Republic of)
Hassan Kaatuzian, Amirkabir Univ. of Technology (Iran, Islamic Republic of)
Hossein Shokri Kojori, Amirkabir Univ. of Technology (Iran, Islamic Republic of)


Published in SPIE Proceedings Vol. 8001:
International Conference on Applications of Optics and Photonics
Manuel Filipe Costa, Editor(s)

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