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Proceedings Paper

Scanning Raman spectroscopy of nanostructured graphene: doping due to presence of edges
Author(s): Stefanie Heydrich; Michael Hirmer; Tobias Korn; Jonathan Eroms; Dieter Weiss; Christian Schüller
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Paper Abstract

We report about scanning Raman experiments on, both, as deposited and nano-structured graphene flakes. The Raman scans allow us to extract spatially resolved information about frequencies, intensities and linewidths of the observed phonon modes. In nano-structured single-layer flakes, where periodic arrays of holes (antidots) were fabricated by electron-beam lithography and subsequent etching, we find a systematic dependence of the phonon frequencies, intensities and linewidths on the periods and hole sizes of the nano-patterned regions. A systematic shift of the G mode frequency evidences a doping effect in the nano-patterned regions. In order to calibrate the doping dependence of the G mode phonon frequency, we have investigated the position and linewidth of this mode in a gated single-layer flake. With this calibration, we can quantitatively determine the doping level, which is introduced via preparation of the periodic hole arrays into the samples. A comparison of G and 2D mode frequencies allows us to identify the doping to be of p-type.

Paper Details

Date Published: 19 September 2011
PDF: 7 pages
Proc. SPIE 8101, Carbon Nanotubes, Graphene, and Associated Devices IV, 810109 (19 September 2011); doi: 10.1117/12.892164
Show Author Affiliations
Stefanie Heydrich, Univ. Regensburg (Germany)
Michael Hirmer, Univ. Regensburg (Germany)
Tobias Korn, Univ. Regensburg (Germany)
Jonathan Eroms, Univ. Regensburg (Germany)
Dieter Weiss, Univ. Regensburg (Germany)
Christian Schüller, Univ. Regensburg (Germany)

Published in SPIE Proceedings Vol. 8101:
Carbon Nanotubes, Graphene, and Associated Devices IV
Didier Pribat; Young-Hee Lee; Manijeh Razeghi, Editor(s)

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