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Proceedings Paper

Minority carrier transport length in electrodeposited Cu2O for heterojunction solar cells
Author(s): Yingchi Liu; Hubert K. Turley; John R. Tumbleston; Rene Lopez
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Paper Abstract

The minority carrier transport length (L) is a critical parameter limiting the performance of inexpensive Cu2O-ZnO photovoltaic devices. In this work, this length is determined for electrochemically deposited Cu2O by linking the optical carrier generation profile from front and back incident-photon-to-electron conversion efficiency (IPCE) measurements to a one dimensional carrier transport model. A transport length of ~ 400 nm is estimated. This critical length explains the losses typically presented by these devices. The consequences of this L on device design with the aim of improving solar cell performance are described.

Paper Details

Date Published: 13 September 2011
PDF: 12 pages
Proc. SPIE 8110, Thin Film Solar Technology III, 81100P (13 September 2011); doi: 10.1117/12.892123
Show Author Affiliations
Yingchi Liu, The Univ. of North Carolina at Chapel Hill (United States)
Hubert K. Turley, The Univ. of North Carolina at Chapel Hill (United States)
John R. Tumbleston, The Univ. of North Carolina at Chapel Hill (United States)
Rene Lopez, The Univ. of North Carolina at Chapel Hill (United States)


Published in SPIE Proceedings Vol. 8110:
Thin Film Solar Technology III
Louay A. Eldada, Editor(s)

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