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Proceedings Paper

Characterization of different transitions in quantum dots-in-a-well (DWELL) infrared photodetectors
Author(s): Ajit V. Barve; Jun Oh Kim; Yagya D. Sharma; Thomas Rotter; Saumya Sengupta; John Montoya; Sanjay Krishna
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Paper Abstract

Systematic characterization of various types of intersubband transitions in the quantum dots in a well (DWELL) infrared photodetectors has been presented. By changing the thickness of the quantum well, the excited state energy can be tuned with respect to the barrier, without altering the quantum dot ground state. Bound to continuum transitions offer very high extraction probability for photoexcited electrons but poor absorption coefficient, while the bound to bound transitions have higher absorption but poorer extraction probability. Bound to quasibound transition is optimum for intermediate values of electric fields with superior signal to noise ratio. The bound to quasibound device has the detectivity of 4×1011 cm.Hz1/2 W-1 (+3V, f /2 optics) at 77 K and 7.4×108 cm.Hz1/2 W-1 at 200 K, which is highest reported detectivity at 200 K for detector with long wave cutoff wavelength. High performance focal plane arrays have been fabricated with noise equivalent temperature difference of 44 mK at 80 K for 6.1μm peak wavelength.

Paper Details

Date Published: 21 May 2011
PDF: 13 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801241 (21 May 2011); doi: 10.1117/12.892025
Show Author Affiliations
Ajit V. Barve, The Univ. of New Mexico (United States)
Jun Oh Kim, The Univ. of New Mexico (United States)
Yagya D. Sharma, The Univ. of New Mexico (United States)
Thomas Rotter, The Univ. of New Mexico (United States)
Saumya Sengupta, The Univ. of New Mexico (United States)
John Montoya, The Univ. of New Mexico (United States)
Sanjay Krishna, The Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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