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Proceedings Paper

Physical properties of Al-doped MgZnO film grown by RF magnetron sputtering using ZnO/MgO/Al2O3 target
Author(s): Kuang-Po Hsueh; Yi-Chang Cheng; Wen-Yen Lin; Hsien-Chin Chiu; Yu-Ping Huang; Gou-Chung Chi; Wei-Sheng Liu
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Paper Abstract

This study investigates the physical properties of Al-doped MgxZn1-xO (AMZO) films. Al-doped MgxZn1-xO films were deposited by radio-frequency (RF) magnetron sputtering system using a 4 inch ZnO/MgO/Al2O3 (76/19/5 wt%) target. This study determined the resulting x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Hall measurement, and transparent performance of the films. XRD results indicate that the diffraction angles of the annealed AMZO film shifted toward the high-angle side, indicating that thermal annealing could relax the compressive strain components in the as-deposited samples. XPS results reveal a high carbon content on the surface of MgxZn1-xO. This may be due to contamination. The average Mg content of the as-grown AMZO is about 19.23 at. % at a depth of 40 nm. The Al-doped MgxZn1-xO film in this study shows high transparency with transmittances over 95 % in the visible region (400 ~ 800nm), and a sharp absorption edge is visible in the UV region due to the Mg content. The Hall measurement of Al-doped MgxZn1-xO films deposited at lower RF power show higher doping concentrations, lower resistivity and higher mobility as a function of the annealing temperature. Experimental results indicate that Al-doped MgxZn1-xO film with 1000 °C annealing contains more oxygen vacancies, which play the role of donor. Oxygen vacancies generate states in the band gap and increase conductivity.

Paper Details

Date Published: 13 September 2011
PDF: 6 pages
Proc. SPIE 8110, Thin Film Solar Technology III, 81100X (13 September 2011); doi: 10.1117/12.891269
Show Author Affiliations
Kuang-Po Hsueh, Vanung Univ. (Taiwan)
Yi-Chang Cheng, Vanung Univ. (Taiwan)
Wen-Yen Lin, Vanung Univ. (Taiwan)
Hsien-Chin Chiu, Chang Gung Univ. (Taiwan)
Yu-Ping Huang, National Central Univ. (Taiwan)
Gou-Chung Chi, National Central Univ. (Taiwan)
Wei-Sheng Liu, Yuan Ze Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8110:
Thin Film Solar Technology III
Louay A. Eldada, Editor(s)

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