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Proceedings Paper

Memory elements based on thin film field-effect transistor
Author(s): Natella R. Aghamalyan; Ruben K. Hovsepyan; Evgenia A. Kafadaryan; Silva I. Petrosyan; Armen R. Poghosyan; Eduard S. Vardanyan
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Paper Abstract

We report the preparation and investigation of heterostructures based on ferroelectric crystals and semiconductor films. The ferroelectric field effect transistor with high transparency for visible light and high field mobility of the charge carriers has been fabricated using ZnO:Li films as a transistor channel. The possibility of use of ferroelectric field effect transistor based on ZnO:Li films as bistable element for information writing has been shown.

Paper Details

Date Published: 5 March 2011
PDF: 6 pages
Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980A (5 March 2011); doi: 10.1117/12.891259
Show Author Affiliations
Natella R. Aghamalyan, Institute for Physical Research (Armenia)
Ruben K. Hovsepyan, Institute for Physical Research (Armenia)
Evgenia A. Kafadaryan, Institute for Physical Research (Armenia)
Silva I. Petrosyan, Institute for Physical Research (Armenia)
Armen R. Poghosyan, Institute for Physical Research (Armenia)
Eduard S. Vardanyan, Institute for Physical Research (Armenia)


Published in SPIE Proceedings Vol. 7998:
International Conference on Laser Physics 2010

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