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Proceedings Paper

Investigation on full 6" masks using innovative solutions for direct physico-chemical analyses of mask contamination and haze
Author(s): L. Dussault; B. Pelissier; F. Dufaye; S. Gough; J. Hamonne; O. Chaix-Pluchery; P. Sergent; M. Tissier
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Paper Abstract

The aim of this study is to determine the different types of haze contamination that occur in industrial conditions, using direct physico-chemical analyses on full 6" masks leaving their pellicle intact. Contaminated masks coming from end users (ST - France) or masks fab (Toppan Photomask) have been analysed. First, references XPS analyses on specially designed blanks from Toppan have been performed. Four references have been studied by angle resolved XPS. These studies show the absence of nitrogen and sulfur contamination on SiO2 side for the four references. On Cr side, a weak residual sulfur contamination has been observed as well as a very significant nitrogen concentration for the masks treated with a standard process. Concerning the masks treated with a sulfate free process, on Cr side, no residual sulfur has been detected by XPS, whereas few trace of nitrogen amount has been detected. Then a mask coming from the ST fab contaminated in real industrial conditions has been studied with several complementary characterisation techniques such as XPS, SEM, Raman and Tof-SIMS. Theses analyses confirm that the back glass haze on the mask is on a particle form. Two types of defects have been found: small particles (a few μm size), having a stick shape, with a very typical form indicating a crystal growth mechanism, and big particles (a few 10 μm size).The detailed physico-chemical results show the composition of the particles. Raman and Tof-Sims clearly show that small particle (with a stick form) are made of ammonium sulfate (NH4)2SO4 crystals. XPS, Raman and Tof-Sims indicate that big particles are a nitrogen containing polymer with a weak sulphate contamination.

Paper Details

Date Published: 2 April 2011
PDF: 12 pages
Proc. SPIE 7985, 27th European Mask and Lithography Conference, 79850O (2 April 2011); doi: 10.1117/12.891050
Show Author Affiliations
L. Dussault, Lab. des Technologies de la Microelectronique, CNRS (France)
B. Pelissier, Lab. des Technologies de la Microelectronique, CNRS (France)
F. Dufaye, STMicroelectronics (France)
S. Gough, STMicroelectronics (France)
J. Hamonne, STMicroelectronics (France)
O. Chaix-Pluchery, Lab. des Matériaux et du Génie Physique, CNRS (France)
P. Sergent, Toppan Photomasks, Inc. (France)
M. Tissier, Toppan Photomasks, Inc. (France)


Published in SPIE Proceedings Vol. 7985:
27th European Mask and Lithography Conference
Uwe F.W. Behringer, Editor(s)

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