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Proceedings Paper

Electro-acoustic sensors based on AlN thin film: possibilities and limitations
Author(s): Gunilla Wingqvist
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Paper Abstract

The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0<x<0.5) solid solution findings. Original calculations are presented to support the discussion.

Paper Details

Date Published: 5 May 2011
PDF: 15 pages
Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 80660U (5 May 2011); doi: 10.1117/12.890662
Show Author Affiliations
Gunilla Wingqvist, Linköping Univ. (Sweden)

Published in SPIE Proceedings Vol. 8066:
Smart Sensors, Actuators, and MEMS V
Ulrich Schmid; José Luis Sánchez-Rojas; Monika Leester-Schaedel, Editor(s)

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