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Proceedings Paper

2 μm InGaSb/GaSb laterally coupled distributed feedback laser fabricated by nanoimprint lithography
Author(s): K. Haring; J. Viheriälä; M.-R. Viljanen; J. Paajaste; R. Koskinen; S. Suomalainen; A. Laakso; K. Leinonen; T. Niemi; M. Guina
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Paper Abstract

We report the development of a nanoimprint lithography patterning method and inductively coupled plasma etching recipe designed for GaSb-based semiconductor materials. The developed processes were used to fabricate edge-emitting ridge-waveguide lasers and laterally-coupled distributed feedback lasers operating at 1945 nm. For ridge-waveguide laser with 1 mm cavity length, a threshold current of 32 mA was measured. Side-mode suppression ratio in excess of 30 dB was measured for the distributed feedback lasers with 2 mW output power and the output wavelength was temperature-tunable with a tuning coefficient of 0.16 nm /°C.

Paper Details

Date Published: 22 March 2011
PDF: 6 pages
Proc. SPIE 7822, Laser Optics 2010, 782208 (22 March 2011); doi: 10.1117/12.890260
Show Author Affiliations
K. Haring, Tampere Univ. of Technology (Finland)
J. Viheriälä, Tampere Univ. of Technology (Finland)
M.-R. Viljanen, Tampere Univ. of Technology (Finland)
J. Paajaste, Tampere Univ. of Technology (Finland)
R. Koskinen, Tampere Univ. of Technology (Finland)
S. Suomalainen, Tampere Univ. of Technology (Finland)
A. Laakso, Tampere Univ. of Technology (Finland)
K. Leinonen, Univ. of Eastern Finland (Finland)
T. Niemi, Tampere Univ. of Technology (Finland)
M. Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 7822:
Laser Optics 2010
Nikolay N. Rosanov; Vladimir Yu. Venediktov, Editor(s)

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