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Proceedings Paper

Effect of laser irradiation on the structures properties such as SiO2/Si
Author(s): V. P. Veiko; A. M. Skvortsov; V. I. Sokolov; Quang Tung Pham; R. A. Khalecki; E. I. Efimov
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Paper Abstract

In this paper the results of research of influence of laser emission on electrophysical and structural parameters of SiO2/Si system are given. Research samples were irradiated with optical fiber YLP-laser (λ=1,06 μm) with 250ns pulse length. Power of emission in impulse was (2-4) - 7,13 Wt/sm2 . As experimental sample thermal oxidated silicon base KEF-4,5 was used, which crystallographic plane was similar to (100). As a result of experiments it is shown that laser irradiation of Si/SiO2 system can form SiO2+silicon nanoclusters system on silicon film. Nano-engineering of SiO2/Si system is accompanied by essential changing of electrophysical properties of initial MOS structures.

Paper Details

Date Published: 28 February 2011
PDF: 5 pages
Proc. SPIE 7996, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010, 79960S (28 February 2011); doi: 10.1117/12.889523
Show Author Affiliations
V. P. Veiko, St. Petersburg State Univ. of Information Technologies, Mechanics and Optics (Russian Federation)
A. M. Skvortsov, St. Petersburg State Univ. of Information Technologies, Mechanics and Optics (Russian Federation)
V. I. Sokolov, Ioffe Physico-Technical Institute (Russian Federation)
Quang Tung Pham, St. Petersburg State Univ. of Information Technologies, Mechanics and Optics (Russian Federation)
R. A. Khalecki, St. Petersburg State Univ. of Information Technologies, Mechanics and Optics (Russian Federation)
E. I. Efimov, St. Petersburg State Univ. of Information Technologies, Mechanics and Optics (Russian Federation)


Published in SPIE Proceedings Vol. 7996:
Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2010
Vadim P. Veiko; Tigran A. Vartanyan, Editor(s)

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