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Proceedings Paper

Direct modeling of external quantum efficiency of silicon trap detectors
Author(s): Thiago Menegotto; Maurício S. Lima; Giovanna B. Almeida; Iakyra B. Couceiro; Hans Peter Grieneisen
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Paper Abstract

It is shown the feasibility of direct fitting of external quantum efficiency for silicon trap detectors which are applied as radiometric transfer standards at several National Institutes of Metrology. The model considers the internal quantum efficiency and the reflectance of the detector, whose parameters are fitted in the measured data of external quantum efficiency. The advantage of the suggested approach is the possibility of pursuing interpolation of spectral responsivity without loss of physical meaning of the fitted parameters.

Paper Details

Date Published: 23 May 2011
PDF: 8 pages
Proc. SPIE 8083, Modeling Aspects in Optical Metrology III, 808313 (23 May 2011); doi: 10.1117/12.889436
Show Author Affiliations
Thiago Menegotto, INMETRO (Brazil)
Maurício S. Lima, INMETRO (Brazil)
Giovanna B. Almeida, INMETRO (Brazil)
Iakyra B. Couceiro, INMETRO (Brazil)
Hans Peter Grieneisen, INMETRO (Brazil)

Published in SPIE Proceedings Vol. 8083:
Modeling Aspects in Optical Metrology III
Bernd Bodermann, Editor(s)

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