Share Email Print
cover

Proceedings Paper

Characterization of multi-interface, multi-layer heavily doped Si:P nanostructures using electromagnetic propagation
Author(s): Z. T. Kuznicki; M. Basta
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Layered semiconductor structures like delta-dopings and buried amorphizations, where modified optoelectronic features result simultaneously from material composition and from device design, can considerably widen optoelectronic applications of conventional materials. Multi-interface novel devices (MINDs) based on a nanoscale Si-layered system buried within the heavily P-doped Si wafer have an unusual reflection, absorption and internal light propagation, which can be dominated by a dense free-carrier gas confined within a surface potential well. First, a model of optical functions of the heavily doped Si:P using experimental data published previously for extremely heavily P-doped Si using the Transition Matrix Approach (TMA) to simulate the electromagnetic optical response and field propagation has been constructed. The dielectric function combines oscillation functions and a dense free-carrier gas (Lorentz-Drude approach) and can take into account an inhomogeneous P-doping distribution. Next, an optical model of the real multi-interface device, based on electron microscopy data, has been constructed. A simplified sequence of buried, optically active interfaces and corresponding layers (with transformed material and refraction indexes) is possible due to a planar geometry. Finally, we compare our simulated and experimental reflectivity. In this way we could determine particularly difficult-to-measure parameters. The method presented could be useful for device characterization during the fabrication.

Paper Details

Date Published: 29 April 2011
PDF: 6 pages
Proc. SPIE 8065, SPIE Eco-Photonics 2011: Sustainable Design, Manufacturing, and Engineering Workforce Education for a Green Future, 80651K (29 April 2011); doi: 10.1117/12.889258
Show Author Affiliations
Z. T. Kuznicki, Ecole Nationale Supérieure de Physique de Strasbourg (France)
M. Basta, Ecole Nationale Supérieure de Physique de Strasbourg (France)


Published in SPIE Proceedings Vol. 8065:
SPIE Eco-Photonics 2011: Sustainable Design, Manufacturing, and Engineering Workforce Education for a Green Future
Pierre Ambs; Dan Curticapean; Claus Emmelmann; Wolfgang Knapp; Zbigniew T. Kuznicki; Patrick P. Meyrueis, Editor(s)

© SPIE. Terms of Use
Back to Top