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Proceedings Paper

Optical properties of crystalline and amorphous Si:P for device fabrication and structural modeling
Author(s): M. Basta; Z. T. Kuznicki; A. Sieradzki
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Paper Abstract

Analytic representation of optical function is necessary for the device and structural modeling. Nowadays optoelectronic devices consist of complex materials combined together, therefore accurate representation of each part is even more important and results in prediction of overall structure properties. The complete model for amorphous and crystalline Si:P dielectric function is presented. Range of accuracy, known problems and model parameters are studied and described. New interesting features of Si:P dielectric functions are discussed. The influence of dopants and free-carriers is taken into account and studied separately and their overlap is also analyzed. The influence of Drude damping time on the optical response of heavily doped Si:P is studied. All results are then compared with experimental data.

Paper Details

Date Published: 29 April 2011
PDF: 9 pages
Proc. SPIE 8065, SPIE Eco-Photonics 2011: Sustainable Design, Manufacturing, and Engineering Workforce Education for a Green Future, 80650I (29 April 2011); doi: 10.1117/12.889255
Show Author Affiliations
M. Basta, Ecole Nationale Supérieure de Physique de Strasbourg (France)
Z. T. Kuznicki, Ecole Nationale Supérieure de Physique de Strasbourg (France)
A. Sieradzki, Wroclaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8065:
SPIE Eco-Photonics 2011: Sustainable Design, Manufacturing, and Engineering Workforce Education for a Green Future
Pierre Ambs; Dan Curticapean; Claus Emmelmann; Wolfgang Knapp; Zbigniew T. Kuznicki; Patrick P. Meyrueis, Editor(s)

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