Share Email Print
cover

Proceedings Paper

Dependence of reliability of GaN LEDs on their junction temperatures and ideal factors
Author(s): Haiping Shen; Xiaoli Zhou; Wanlu Zhang; Muqing Liu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The relationship between the reliability of GaN LEDs and their junction temperatures and ideal factors is investigated. 20 groups of both blue and white GaN LEDs are tested. Their ideal factors and junction temperatures under 700mA operating current are measured. The measurement methods are introduced. After the measurement, 700mA high current accelerated life test is carried out on the LEDs. Analysis results show that the reliability of the LEDs is strongly dependent on their junction temperatures and ideal factors. For most of the unreliable LEDs with their 50% ALT life less than 400 hours, their ideal factors are higher than 10, or the junction temperatures of the blue LEDs under 700mA are higher than 130°C, and the junction temperatures of the white LEDs under 700mA are higher than 120°C.

Paper Details

Date Published: 11 January 2011
PDF: 6 pages
Proc. SPIE 7991, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II, 799104 (11 January 2011); doi: 10.1117/12.888644
Show Author Affiliations
Haiping Shen, Fudan Univ. (China)
Xiaoli Zhou, Fudan Univ. (China)
Wanlu Zhang, Fudan Univ. (China)
Muqing Liu, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 7991:
Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy II
Heonsu Jeon; Min Gu; Yi Luo; Chih-Chung Yang; Muqing Liu, Editor(s)

© SPIE. Terms of Use
Back to Top