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Proceedings Paper

Molecular beam epitaxial growth of CdTe and related II-VI materials on Si for the fabrication of infrared detectors and solar cells
Author(s): Sivalingam Sivananthan; Michael Carmody; Chollada Gilmore; James Garland
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Paper Abstract

CdTe/Si substrates with etch-pit densities ~5 x 104 - 2 x105 cm-2 and x-ray diffraction full-width at half-maximum <60 arcsec over >60% of a 3" substrate and ≤85 arcsec over the entire area are now available. Midwave and shortwave HgCdTe infrared detectors fabricated on these substrates have device characteristics as good as those of detectors fabricated on lattice-matched CdZnTe substrates. Also, minority carrier lifetimes of 100s of nanoseconds are measured for CdTe/Si and CdZnTe/Si, and both can be p-doped 1017 cm-3 and n-doped >1020 cm-3. Calculations suggest that the use of these materials should yield multijunction solar cells with efficiencies higher than those of the corresponding III-V multijunction cells at much lower cost, using rugged, large-area, inexpensive active Si substrates. The first CdZnTe/Si single-junction solar cells fabricated by EPIR displayed an electronic-charge times open-circuit voltage, qVoc, within ~0.45 eV of the CdZnTe bandgap Eg, as good a result as that for the best III-V alloy single-junction cells, and confirmed the suitability of single-crystal CdZnTe/Si for the manufacture of high-efficiency solar cells.

Paper Details

Date Published: 18 February 2011
PDF: 8 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951V (18 February 2011); doi: 10.1117/12.888643
Show Author Affiliations
Sivalingam Sivananthan, EPIR Technologies, Inc. (United States)
Michael Carmody, EPIR Technologies, Inc. (United States)
Chollada Gilmore, EPIR Technologies, Inc. (United States)
James Garland, EPIR Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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