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Proceedings Paper

Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy
Author(s): Jun Shao; Wei Lu; Lu Chen; Xiang Lu; Shaoling Guo; Junhao Chu; Li He
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Paper Abstract

We outline experimental data recently established in our study of in-situ arsenic (As) doped narrow-gap Hg1-xCdxTe films by infrared modulation spectroscopy. After a brief introduction of the step-scan Fourier transform infrared spectrometer-based modulation spectroscopic techniques, impurity levels and photomodulation mechanisms in As-doped HgCdTe epilayers are surveyed based on infrared modulation spectroscopic data, and the possibility of identifying cut-off wavelength and vertical uniformity of HgCdTe epilayers is indicated. The results illustrate that the infrared modulation spectroscopy will play an important role in optical characterization of narrow-gap semiconductors.

Paper Details

Date Published: 18 February 2011
PDF: 7 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799503 (18 February 2011); doi: 10.1117/12.888532
Show Author Affiliations
Jun Shao, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)
Lu Chen, Shanghai Institute of Technical Physics (China)
Xiang Lu, Shanghai Institute of Technical Physics (China)
Shaoling Guo, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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