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Proceedings Paper

Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)
Author(s): Yoshifumi Ikoma; Hafizal Yahaya; Hirofumi Sakita; Yuta Nishino; Teruaki Motooka
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Paper Abstract

We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.

Paper Details

Date Published: 18 February 2011
PDF: 6 pages
Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951Y (18 February 2011); doi: 10.1117/12.888531
Show Author Affiliations
Yoshifumi Ikoma, Kyushu Univ. (Japan)
Hafizal Yahaya, Kyushu Univ. (Japan)
Univ. Teknologi Malaysia (Malaysia)
Hirofumi Sakita, Kyushu Univ. (Japan)
Yuta Nishino, Kyushu Univ. (Japan)
Teruaki Motooka, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 7995:
Seventh International Conference on Thin Film Physics and Applications
Junhao Chu; Zhanshan Wang, Editor(s)

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